document number: 89330 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-dec-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 dual trench mos barrier schottky rectifier ultra low v f = 0.32 v at i f = 5.0 a vbt4060c vishay general semiconductor new product features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? meets msl level 1, per j-std-020, lf maximum peak of 245 c ? not recommended for pcb bottom side wave mounting ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in high frequency converters, switching power supplies, freewheeling diod es, or-ing diode, dc/dc converters, and reverse battery protection. mechanical data case: to-263ab molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 20 a v rrm 60 v i fsm 240 a v f at i f = 20 a 0.48 v t j max. 150 c to-263ab 1 2 k pin 1 pin 2 k heatsink vbt4060c tmbs ? maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vbt4060c unit maximum repetitive pe ak reverse voltage v rrm 60 v maximum average forward rectified current (fig. 1) per device i f(av) 40 a per diode 20 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 240 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 40 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89330 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 07-dec-10 vbt4060c vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power dissipation characteristics per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. min. unit instantaneous forward voltage per diode i f = 5.0 a t a = 25 c v f (1) 0.43 - v i f = 10 a 0.48 - i f = 20 a 0.53 0.62 i f = 5.0 a t a = 125 c 0.32 - i f = 10 a 0.39 - i f = 20 a 0.48 0.57 reverse current per diode v r = 60 v t a = 25 c i r (2) -6.0 ma t a = 125 c 34 190 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vbt4060c unit typical thermal resistance per diode r jc 1.5 c/w per device 0.8 ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-263ab vbt4060c-e3/4w 1.39 4w 50/tube tube to-263ab vbt4060c-e3/8w 1.39 8w 800/reel tape and reel case temperature (c) average forward rectified current (a) 45 30 25 15 5 0 0 25 50 75 125 150 10 100 20 40 35 0 8 10 12 14 048 2024 average forward current (a) average power loss (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 12 d = t p /t t p t 2 4 6 16
document number: 89330 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 07-dec-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vbt4060c vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical transient thermal impedance per diode package outline dimensions in inches (millimeters) instantaneous forward voltage (v) 0 0.1 0.3 0.6 0.8 100 10 1 0.1 t a = 150 c t a = 125 c t a = 100 c t a = 25 c 0.5 0.7 instantaneous forward current (a) 0.2 0.4 20 40 60 80 100 10 0.1 0.01 0.001 1000 100 percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 1 100 1000 10 000 0.1 1 10 100 reverse voltage (v) junction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mv p-p 10 0.1 0.01 0.1 1 10 100 t - pulse duration (s) junction to case 1 transient thermal impedance (c/w) to-263ab mounting pad layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.08 (2.032) mi n . 0.15 (3.81) mi n . 0.33 (8.38) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4.83) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 (8.13) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) mi n .
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